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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP&NPN Muti-Chip General Purpose Transistor VOLTAGE 40 Volts APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. CHT4413UPNPT CURRENT 600 mAmpere FEATURE * Small surface mounting type. (SC-88/SOT-363) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. * Two internal isolated PNP and NPN transistors in one package. (1) (6) SC-88/SOT-363 1.2~1.4 0.65 0.65 2.0~2.2 CONSTRUCTION * PNP and NPN transistors in one package. (4) 0.15~0.35 (3) 1.15~1.35 0.08~0.15 0.1 Min. C1 B2 5 E2 4 0.8~1.1 0~0.1 2.15~2.45 CIRCUIT 6 TR2 TR1 1 E1 2 B1 3 C2 Dimensions in millimeters SC-88/SOT-363 TR1 CHT4401 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; note 1 CONDITIONS open emitter open base open collector - - - - - -65 - -65 MIN. MAX. 60 40 6 600 200 +150 150 +150 V V V mA mW C C C 2004-8 UNIT TR2 CHT4403 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Tamb Note 2. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; note 2 CONDITIONS open emitter open base open collector - - - - - -65 - -65 MIN. MAX. -40 -40 -5 -600 200 +150 150 +150 UNIT V V V mA mW C C C TR1 CHT4401 CHARACTERISTICS Tamb = 25 C unless otherwise speciped. SYMBOL PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cut-off current base cut-off current CONDITIONS IC = 100uA ; IE = 0A IC = 1mA ; IB = 0A IE = 100uA ; IC = 0A VEB(OFF) = 0.4V ; VCE = 35 V VEB(OFF) = 0.4V ; VCE = 35 V I IC = 100uA; VCE = 1V hFE DC current gain IC = 1 mA; VCE = 1V IC = 10 mA; VCE = 1V IC = 150 mA; VCE = 1V IC = 500 mA; VCE = 2V VCEsat VBEsat Ccb Ceb hie hre hfe hoe fT td tr ts tf collector-emitter saturation base-emitter saturation voltage output capacitance input capacitance input impedance voltage feedback ratio small signal current gain output impedance transition frequency delay time rise time storage time fall time IC = 150 mA; IB = 15 mA IC = 500 mA; IB = 50 mA IC = 150 mA; IB = 15 mA IC = 500 mA; IB = 50 mA VCB=5.0V; f=1.0MHZ; IE=0 VEB=0.5V; f=1.0MHZ; IC=0 MIN. 60 40 6 - - 20 40 80 100 40 - - 750 - - - 1.0 0.1 40 1.0 250 - - - - - - - 100 100 - - - 300 - 400 750 950 1200 6.5 30 15 8.0 500 30 - 15 20 225 30 mV mV mV mV pF pF K x10 -4 S MAX. V V V UNIT V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL nA nA VCE=10V; f=1.0KHZ; IC=1.0mA IC = 20 mA; VCE = 10 V; f = 100 MHz VCC=30V; IC=150mA VBE(off)=2.0V; IB1=15mA VCC=30V; IC=150mA IB1=IB2=15mA MHz nS nS nS nS TR2 CHT4403 CHARACTERISTICS Tamb = 25 C unless otherwise speciped. SYMBOL PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cut-off current base cut-off current CONDITIONS IC = -100uA ; IE = 0A IC = -1mA ; IB = 0A IE = -100uA ; IC = 0A VEB(OFF) = -0.4V ; VCE = -35 V VEB(OFF) = -0.4V ; VCE = -35 V IC = -100uA; VCE = -1V hFE DC current gain IC = -1 mA; VCE = -1V IC = -10 mA; VCE = -1V IC = -150 mA; VCE = -2V IC = -500 mA; VCE = -2V VCEsat VBEsat Ccb Ceb hie hre hfe hoe fT td tr ts tf collector-emitter saturation base-emitter saturation voltage output capacitance input capacitance input impedance voltage feedback ratio small signal current gain output impedance transition frequency delay time rise time storage time fall time IC = -150 mA; IB = -15 mA IC = -500 mA; IB = -50 mA IC = -150 mA; IB = -15 mA IC = -500 mA; IB = -50 mA VCB=-10V; f=1.0MHZ; IE=0 VEB=-0.5V; f=1.0MHZ; IC=0 MIN. -40 -40 -6 - - 30 60 100 100 20 - - -750 - - - 1.5 0.1 60 1.0 200 - - - - - - - -100 -100 - - - 300 - -400 -750 -950 -1300 8.5 30 15 8.0 500 100 - 15 20 225 30 mV mV mV mV pF pF K x10 -4 S MAX. V V V UNIT V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL nA nA VCE=-10V; f=1.0KHZ; IC=-1.0mA IC = -20 mA; VCE = - 10 V f = 100 MHz VCC=-30V; IC=-150mA VBE(off)=-2.0V; IB1=-15mA VCC=-30V; IC=-150mA IB1=IB2=-15mA MHz nS nS nS nS RATING CHARACTERISTIC CURVES ( CHT4413UPNPT ) TR1 CHT4401 Typical Characteristics V CESAT - COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical DC Current Gain vs Collector Current 1K V CE = 1V Collector-Emitter Saturation Voltage vs Collector Current 0.5 0.4 0.3 0.2 25 C IC /I B =10 25 C 100 10 0.1 0 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 1 0.1 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 30 CAPACITANCE (pF) 20 10 C ibo V BE(ON) - BASE-EMITTER ON VOLTAGE (V) Typical Capacitance f = 1MHz Base-Emitter ON Voltage vs Collector Current 1 V CE = 5V 0.8 - 50 C 0.6 25 C 5.0 Cobo 0.4 125 C 1.0 0.1 1 10 50 0.2 0.1 REVERSE BIAS VOLTAGE (V) 1 10 I C - COLLECTOR CURRENT (mA) 100 RATING CHARACTERISTIC CURVES ( CHT4413UPNPT ) TR1 CHT4403 Typical Characteristics V CESAT - COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical DC Current Gain vs Collector Current 1K V CE = 1V Collector-Emitter Saturation Voltage vs Collector Current 0.5 0.4 0.3 0.2 25 C IC /I B =10 25 C 100 10 0.1 0 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 1 0.1 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 30 CAPACITANCE (pF) 20 10 C ibo V BE(ON) - BASE-EMITTER ON VOLTAGE (V) Typical Capacitance f = 1MHz Base-Emitter ON Voltage vs Collector Current 1 V CE = 5V 0.8 - 50 C 0.6 25 C 5.0 Cobo 125 C 0.4 1.0 -0.1 -1 -10 -50 0.2 0.1 REVERSE BIAS VOLTAGE (V) 1 10 I C - COLLECTOR CURRENT (mA) 100 |
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